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PHOTODIODE
Si photodiode
S9032
RGB color sensor
S9032 is a color sensor molded into a plastic package having a 3-channel (RGB) photodiode sensitive to the blue (p=460 nm), green (p=540 nm) and red (p=660 nm) regions of the spectrum. S9032 has a 3-segment (RGB) circular active area of 2 mm.
Features
Applications
l 3-channel (R, G, B) Si photodiode l Surface-mount small plastic package l High sensitivity l Active area: 3-segment (RGB) circular active area of 2 mm
l White balance adjustment l Color identification l Brightness level detection for projectors, TVs, etc. l Color management l Color temperature detection of light sources
I Absolute maximum ratings
Parameter Reverse voltage Operating temperature Storage temperature Parameter
Symbol VR Max Topr Tstg Symbol l Condition Blue Green Red Blue Green Red Blue l=lp Green Red VR=1 V All elements VR=0 V, RL=1 kW 10 to 90 % VR=0 V f=10 kHz
Value 10 -25 to +85 -40 to +100 Min. 0.16 0.20 0.37 Typ. 400 to 540 480 to 600 590 to 720 460 540 660 0.21 0.25 0.42 5 1.12 0.2 40 Max. 100 80
Unit V
+ +
I Electrical and optical characteristics(Ta= 25 C, per element )
Spectral response range
Unit nm
Peak sensitivity wavelength
lp
nm
Photo sensitivity Dark current Temperature coefficient of ID Rise time Terminal capacitance
S ID TCID tr Ct
A/W pA times/C s pF
PRELIMINARY DATA Aug. 2002
1
Si photodiode
I Spectral response
0.5 RED (Typ. Ta=25 C)
S9032
I Dark current vs. reverse voltage
1 nA (Typ. Ta=25 C)
I Terminal capacitance vs. reverse voltage
1 nF (Typ. Ta=25 C)
PHOTO SENSITIVITY (A/W)
100 pA
TERMINAL CAPACITANCE
0.1 1 10 100
0.4
DARK CURRENT
GREEN 0.3
100 pF
10 pA
BLUE 0.2
10 pF
1 pA
0.1
0 200
400
600
800
1000
1200
100 fA 0.01
1 pF 0.1
1
10
100
WAVELENGTH (nm)
KSPDB0217EA
REVERSE VOLTAGE (V)
KSPDB0218EA
REVERSE VOLTAGE (V)
KSPDB0219EA
I Dimensional outline (uint: mm)
ACTIVE AREA FILTER 3.2 x 3.2 x 0.55 t PHOTOSENSITIVE SURFACE
4.1 0.2 (INCLUDING BURR)
(6 x) 0.5
1.27
5.0 0.2 (INCLUDING BURR)
(2 x) 10
(2 x) 5
0.4 0.8 1.8
* 4.7
RB G
1.5 0.4
* 4.0
1.5 0.4
7.0 0.3 0.7 0.3 (2 x) 10 0.7 0.3 PHOTOSENSITIVE SURFACE
1.27
ANODE (RED) CATHODE COMMON ANODE (GREEN) N/C CATHODE COMMON ANODE (BLUE) Tolerance unless otherwise noted: 0.1, 2 Shaded area indicates burr. Chip position accuracy with respect to the package dimensions marked * X, Y0.2, 2
KSPDA0154EA
(2 x) 5
2.0 DEPTH 0.15 MAX.
0.1 0.1
0.25
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2002 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
* 4.8
2
Cat. No. KSPD1059E01 Aug. 2002 DN

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